| Item | Contents |
|---|
| Equipment | HDP-CVD | | Substrate | ϕ 300mm Si Wafer | | Structure | Via：ϕ 2μm、Depth：13μm | | Film type | SiO2 | | Film thickness | Sidewall：100nm aim | | Material | SiH4 | | Temperature | <200℃ | | Refractive index | 1.46 | | Withstand voltage | 10MV/cm | | Leakage current | 2 × 10-9A/cm2 | | H（Hydrogen amount） | <5% |
|
